Technology

Publications

Domestic Patent

  • 1. Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate
    • Appl. Phys. Lett. 95 , 071101 (2009)
  • 2. Ohmic contact properties of nonpolar a-plane GaN films on r-plane sapphire substrates
    • J. Phys. D: Appl. Phys. 42, 245101 (2009)
  • 3. Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electro absorption and carrier dynamics behavior
    • Photonics Global Conference (PGC), (2010)
  • 4. Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (11-20) GaN Light
    • Emitting Diodes on Sapphire Substrate
    • Photonics Technology Letters. 22, 595 (2010)
  • 5. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique
    • Nanotechnology 21, 134026 (2010)
  • 6. Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching
    • Optics Express, Vol. 18, Issue 9, pp.9728-9732 (2010)
  • 7. Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two stage growth process
    • J. Appl. Phys. 110, 093709 (2011)
  • 8. Raman and emission characteristics of a-plane InGaN/GaN blue-green light emitting diodes on r-sapphire substrates
    • J. Appl. Phys. 109, 043103 (2011)
  • 9. Etched Surface Morphology of Heteroepitaxial Nonpolar (11-20) and Semipolar (11-22) GaN Films by Photo enhanced Chemical Wet Etching
    • J. Electrochem. Soc. volume 158, issue 4, D196-D199 (2011)
  • 10. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates
    • Optics Express, Vol. 19, Issue 14, 12919 (2011)
  • 11. Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a–plane n-type GaN
    • AIP Conf. Proc. 1399 , 153 (2011)
  • 12. Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
    • J. Appl. Phys. 111 , 033103 (2012)
  • 13. Effect of r-plane (1–102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11–20) GaN
    • Journal of the Korean Physical Society May, Volume 60, Issue 10, pp 1649-1655 (2012)
  • 14. Thermal degradation of Ohmic contacts on semipolar (11–22) GaN films grown on m-plane (1–100) sapphire substrates
    • Journal of the Korean Physical Society October, Volume 61, Issue 7, pp.1060-1064 (2012)
  • 15. High brightness nonpolar a-plane (11–20) GaN light-emitting diodes
    • Semicond. Sci. Technol. 27, 024017 (2012)
  • 16. Analysis of the modified williamson-hall plot of non-polar a-plane GaN films
    • Journal of the Korean Physical Society Volume 62, Issue 4, pp.601-605 (2013)
  • 17. Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates
    • J. Appl. Phys. 113 , 023506 (2013)
  • 18. Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode
    • Appl. Phys. Lett. 103 , 021111 (2013)
  • 19. Investigation of carrier transport properties in semipolar (11-22) GaN films with low defect density
    • Appl. Phys. Lett. 103 , 162103 (2013)
  • 20. Structural and electrical anisotropies of Si-doped a-plane (11–20) GaN films with different SiNx interlayers
    • Semicond. Sci. Technol. 28 085007 (2013)
  • 21. Influence of Growth Parameters on Structural Anisotropy of Epitaxial a‐plane GaN Films
    • Appl. Phys. Lett. 103 , 162103 (2013)
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